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SMD 10MHz OCXO 25.4 x 22 mm

Frequency: 10MHz
Supply Voltage: 12 V
Output level: Sine wave
Package Size: 25.4 x 22 x 13.20 mm

Ultra Low Phase Noise 10MHz SMD OCXO – High Precision Reference

Product Overview:

Our 10MHz OCXO is a high-performance, oven-controlled crystal oscillator housed in a compact SMD package. Designed for mission-critical applications, it offers ultra-low phase noise performance (up to -115 dBc/Hz at 1Hz offset) and exceptional short-term stability (Allan Variance of 0.002 ppb). This series features an integrated electrical frequency tuning input and a reference voltage output, making it easy to integrate into complex microwave systems.

Key Features:

  • Ultra-Low Phase Noise: Multiple options available, reaching -115 dBc/Hz @ 1Hz and a noise floor of -170 dBc/Hz.

  • Compact SMD Design: Ideal for space-constrained PCB layouts without sacrificing stability.

  • Exceptional Stability: Tight frequency stability options from ±5 ppb to ±100 ppb.

  • Superior Allan Variance: 0.002 ppb (t=1 sec), ensuring ultra-precise short-term timing.

  • Fast Warm-up Time: Reaches stability within 5 minutes at 25°C.

  • Rugged Construction: Built to meet MIL-STD-202 standards for vibration and shock.

  • Easy Integration: Includes Electrical Frequency Tuning (VCO Input) and Reference Voltage Output.

Applications:

  1. Radar Systems: Low phase noise ensures superior target detection and signal clarity.

  2. Test & Measurement: High-stability reference for frequency counters and synthesizers.

  3. Microwave Communication: Critical for clock references in microwave signal sources.

  4. Telecom Systems: Reliable synchronization for high-speed data networks.


Electrical Specifications


Test conditions: VDC = +12 V; VCO = +5 V; at +25 ± 3°C unless otherwise identified

1. Output (PIN = “R.F. OUTPUT”)

ParameterMin.Typ.Max.UnitTest Condition
Frequency10 MHz
Initial
Accuracy
-0.1 
0.1 ppm@+25±1℃
after turn on power 60 minutes
Vco=+5V
WaveformSine wave

Level10 12 dBm
Load
50 


Harmonics

-30 dBc
Spurious

-80 dBc10Hz to 1MHz from carrier
2.Frequency Stability
ParameterMin.Typ.Max.UnitTest Condition
Ambient±5,±10,±20,±30,±50,±100ppbreferenced to 25℃
-20℃~+70℃
-40℃~+85
Aging

Daily-0.5 
0.5 ppbafter 30 days of continuous operation
Yearly-50 
50 ppb
10 Years-0.3 
0.3 ppm
Voltage-1 
ppb±5%change
Short term
0.002 
ppbroot Allan variance for t=1 sec
Load-1 
ppb±5%change
Warm-up-50 
50 ppbin 5minutes @+25±1 referenced to 1 hour
Phase Noise
(Max. )
Option 1Option 2Option 3

-105 -110 -115 dBc/Hz@1Hz
-135 -140 -142 dBc/Hz@10Hz
-155 -155 -155 dBc/Hz@100Hz
-165 -165 -165 dBc/Hz@1KHz
-170 -170 -170 dBc/Hz@10KHz
-170 -170 -170 dBc/Hz@100KHz


3.Electrical Frequency Adjustment(PIN=“VCO INPUT”)
ParameterMin.Typ.Max.UnitTest Condition
Tuning Range±0.4*

ppmReferenced to frequency at
nominal Center Voltage
Control0.5 
9.5 V
SlopePositive

Center

V
Linearity-10 
10 %
4.Input  Power(PIN=“+VDC”)
ParameterMin.TyP.Max.UnitTest Condition
Voltage11.4 12 12.6 V
Current

Steady State

W@+25℃,operating-20℃~+70℃


2.3 @+25℃,operating-40C~+85℃
During Warm-Up

400 mA@+25℃,operating-20℃~+70℃


500 @+25℃,operating-40℃~+85℃
5.Reference Voltage(PIN="REFERENCE VOLTAGE")
ParameterMin.Typ.MaxUnitsTest Condition
Voltage9.25 9.5 9.75 V
Source

100 Ohm
Load10 

Kohm
6.Environental
ParameterReference Std.Test Condition
Operable Temperature-45℃ to+90℃
Storage Temperature-50℃ to+95℃
HumidityMIL-STD-202,Method 10395%RH @+40℃,non-
condensing.240 hours
Test Condition A
Vibration(non-MIL-STD-202,Method 2010.06"Total p-p,10 to 55Hz
Shock(non-operating)MIL-STD-202,Method 213,30g,11ms,half-sine
Test Condition J

 

Dimensions


SMD OCXO dimension.png

SMD OCXO Pin.png

Ultra low phase noise VCXO


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